Gallium Nitride (GaN) Semiconductor Device Market report provides key statistics on the market status of the Gallium Nitride (GaN) Semiconductor Device Industry and is a valuable source of guidance and direction for companies and individuals interested in the Gallium Nitride (GaN) Semiconductor Device Market. Gallium Nitride (GaN) Semiconductor Device Market Report covers the companies’ data, including Growth potential analysis, Executive Summary, Data sources, Industry segmentation, Porter’s analysis, Business trends, Growth drivers, Price trend analysis, Industry pitfall and challenges, Industry impact forces, Competitive landscape
This report has keen to several extents of analysis – industry research (global industry trends) and Gallium Nitride (GaN) Semiconductor Device market share analysis of topmost companies, along with company profiles, and which cooperatively include about the ultimate views regarding the Gallium Nitride (GaN) Semiconductor Device market landscape, emerging and an evolutionary segments of Gallium Nitride (GaN) Semiconductor Device market.
Gallium Nitride (GaN) Semiconductor Device Market forecasting derived from in-depth understanding attained from future market spending patterns provides enumerated insight to support your decision-making process. Our market forecasting is based on a market model derived from market connectivity, dynamics, and identified persuasive factors around which conventions about the market are made. These conventions are enlightened by fact-bases, put by primary and secondary research instruments, regressive analysis and an extensive connect with industry people.
Global Gallium Nitride Semiconductor Device Market to reach USD 29.2 billion by 2025.Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately USD 17.01 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices. A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced. The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors are growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.
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The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market.
The key manufacturers covered in this report:
- Cree, Samsung, Infineon, Qorvo, MACOM, Microsemi Corporation, Analog Devices, Mitsubishi Electric, Efficient Power Conversion, GaN Systems, Exagan, VisIC Technologies, Integra Technologies, Transphorm, Navitas Semiconductor, Nichia, Panasonic, Texas Instruments, Ampleon, Sumitomo Electric, Northrop Grumman Corporation, Dialog Semiconductor, Epistar, RF Micro Devices Corporation, Osram Opto-semiconductors, Aixtron SE, Gallia Semiconductor, ROHM Company Limited and so on.
The report Gallium Nitride (GaN) Semiconductor Device market is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Besides, the Gallium Nitride (GaN) Semiconductor Device market report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Moreover, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players.
Major Highlights from Table of contents are listed below for quick lookup into Gallium Nitride (GaN) Semiconductor Device Market report
Chapter 1. Competitive Landscape
- Company market share
- Gallium Nitride (GaN) Semiconductor Device Market Competitive analysis of key market players
- Competitive analysis of other prominent vendors
Chapter 2. Company Profiles
- Business Overview
- Financial Data
- Product portfolio
- Strategic Outlook
- SWOT Analysis
Chapter 3. Methodology & Scope
- Methodology
- Initial data exploration
- Gallium Nitride (GaN) Semiconductor Device Market Statistical model and forecast
- Industry insights and validation
- Gallium Nitride (GaN) Semiconductor Device Market Scope
- Definition
- Methodology and forecast parameters
- Data Sources
Chapter 4. Executive Summary
- Gallium Nitride (GaN) Semiconductor Device industry 360º synopsis – 2025
- Gallium Nitride (GaN) Semiconductor Device Business trends
- Region trends
Chapter 5. Gallium Nitride (GaN) Semiconductor Device industry Insights
- Gallium Nitride (GaN) Semiconductor Device Industry segmentation
- Industry landscape 2025
- Industry Pitfalls and Challenges
- Threat of new entrants
- Threat of substitutes
- Gallium Nitride (GaN) Semiconductor Device Market Growth potential analysis
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